Spatially Resolved Band Gap and Dielectric Function in Two-Dimensional Materials from electron Energy-Loss Spectroscopy.
A. Brokkelkamp, J. ter Hoeve, I. Postmes, S. E. van Heijst, L. Maduro, A. V. Davydov, S. Krylyuk, J. Rojo, and S. Conesa-Boj, J. Phys. Chem. A (2022)

First-Principles Calculation of Optoelectronic Properties in 2D Materials: The Polytypic WS2 case.
L. Maduro, S. E. van Heijst, and S. Conesa-Boj, ACS Phys. Chem. Au (2022)


Position-Controlled Fabrication of Vertically-Aligned Mo/MoS2 Core-Shell Nanopillar Arrays.
L. Maduro, M. Noordam, M. Bolhuis, L. Kuipers, and S. Conesa-Boj, Advanced Functional Materials 2107880 (2021)

Revealing the nanogeometry of WS2 nanoflowers by polarization-resolved Raman spectroscopy.
I. Komen, Sabrya E. van Heijst, S. Conesa-Boj, and L. Kuipers, arXiv:2110.14976 (2021)

Molybdenum nanopillar arrays: Fabrication and engineering.
L. Maduro, C. de Boer, M. Zuiddam, E. Memisevic, and S. Conesa-Boj, Physica E: Low-dimensional Systems and Nanostructures, 134, 114903 (2021)

Morphology-induced spectral modification of self-assembled WS2 pyramids.
I. Komen, S. E. van Heijst, S. Conesa-Boj, and L. Kuipers, Nanoscale Advances (2021) DOI: 10.1039/d1na00531f

Charting the low-loss region in electron energy loss spectroscopy with machine learning.
L. I. Roest, S. E. van Heijst, L. Maduro, J. Rojo, and S. Conesa-Boj, Ultramicroscopy, 222, 113202 (2021)

llluminating the electronic properties of WS2 polytypism with electron microscopy.
S. E. van Heijst, M. Mukai, E. Okunishi, H. Hashiguchi, L. I. Roest, L. Maduro, J. Rojo, and S. Conesa-Boj, Ann. Phys. (Berlin), 533, 2000499  (2021)


Lock-in ultrafast electron microscopy simultaneously visualizes carrier recombination and interface-mediated trapping.
M. W. H. Garming, M. Bolhuis, S. Conesa-Boj, P. Kruit, and J. P. Hoogenboom, The Journal of Physical Chemistry Letters, 11, 8880 (2020)

Robust fabrication of large-area in- and out-of-plane cross-section samples of layered materials with ultramicrotomy.
M. O. Cichocka, M. Bolhuis, S. E. van Heijst, and S. Conesa-Boj, ACS Applied Materials and Interfaces, 12, 15867 (2020)

Vertically-oriented MoS2 nanosheets for nonlinear optical devices.
M. Bolhuis, J. Hernández-Rueda, S. E. van Heijst, M. Tinoco Rivas, L. Kuipers, and S. Conesa-Boj, Nanoscale, 12, 10491 (2020)


Metallic Edge States in Zig-Zag Vertically-oriented MoS2 Nanowalls.
M. T. Rivas, L. Maduro, and S. Conesa-Boj, Scientific Reports, 9, Article number: 15602 (2019)


Strain-Dependent Edge Structures in MoS2 Layers.
M. T. Rivas, L. Maduro, M. Masaki, E. Okunishi, and S. Conesa-Boj, Nano Letters, 17, 7021 (2017)

Ballistic superconductivity in semiconductor nanowires.
H, Zhang, Ö. Gül, S. Conesa-Boj, M. Nowak, M. Wimmer, K. Zuo, V. Mourik, F. de Vries, J. van Veen, M. de Moor, J. Bommer, D. van Woerkom, D. Car, S. Plissard, E. Bakkers, M. Quintero-Pérez, M. Cassidy, S. Koelling, S. Goswami, K. Watanabe, T. Taniguchi, and L. Kouwenhoven, Nature Communications, 8, 16025 (2017)

Towards higher electron mobility in modulation doped GaAs/AlGaAs core shell nanowires.
J. L. Boland, G. Tutuncuoglu, J. Q. Gong, S. Conesa-Boj, C. L Davies, L. M Herz, A. Fontcuberta i Morral, and M. B Johnston, Nanoscale, 9, 7839 (2017)

Observation of Conductance Quantization in InSb Nanowire Networks.
E. M. T. Fadaly, H. Zhang, S. Conesa-Boj, D. Car, Ö. Gül, S. R. Plissard, R. L. M. Veld, S. Kölling, L. P. Kouwenhoven, and E. P. A. M. Bakkers,  Nano Letters, 17, 6511 (2017)

Boosting hole mobility in coherently strained [110]-oriented Ge-Si core-shell nanowires.
S. Conesa-Boj, A. Li, S. Koelling, M. Brauns, J. Ridderbos, T. Nguyen, M. Verheijen, P. Koenraad, F. Zwanenburg, and E. P. A. M. Bakkers, Nano Letters, 17, 2259 (2017)

Hard superconducting gap in InSb nanowires.
Ö. Gül, H. Zhang, F. K. de Vries, J. van Veen, K. Zuo, V. Mourik, S. Conesa-Boj, M. P. Nowak, D. J. van Woerkom, M. Quintero-Pérez, M. C. Cassidy, A. Geresdi, S. Kölling, D. Car, S. R. Plissard, E. P. A. M. Bakkers, and L. P. Kouwenhoven, Nano Letters, 17, 2690 (2017)

Single-Crystalline Hexagonal Silicon-Germanium.
H. I. T Hauge, S. Conesa-Boj, M. A. Verheijen, S. Kolling, and E. P. A. M. Bakkers, Nano Letters, 17, 85 (2017)

InSb Nanowires with Built-In GaxIn1-xSb Tunnel Barrier for Majorana Devices.
D. Car, S. Conesa-Boj, H. Zhang, R. L. M. Op het Veld, M. W. A. de Moor, E. M. T. Fadaly, O. Gul, S. Kolling, S. R. Plissard, V. Toresen, M. T. Wimmer, K. Watanabe, T. Taniguchi, L. P. Kouwenhoven, and E. P. A. M. Bakkers, Nano Letters, 17, 721 (2017)


Synthesis, morphological and electro-optical characterizations of metal/semiconductor nanowire heterostructures.
M. Glaser, A. Kitzler, A. Johannes, S. Prucnal, H. Potts, S. Conesa-Boj, L. Filipovic, H. Kosina, W. Skorupa, E. Bertagnolli, C. Ronning, A. Fontcuberta i Morral, and A. Lugstein, Nano Letters 16, 3507 (2016)

Ballistic Majorana nanowire devices.
H. Zhang, O. Gul, S. Conesa-Boj, K. Zuo, V. Mourik, F. K. de Vries, J. van Veen, D. J. van Woerkom, M. P. Nowak, M. Wimmer, D. Car, S. Plissard, E. P. A. M. Bakkers, M. Quintero-Prez, S. Goswami, K. Watanabe, T. Taniguchi, and L. P. Kouwenhoven, arXiv:1603.04069 (2016)


Analysis of the Atomic Layer Deposited Al2O3 field effect passivation in black silicon.
G. Von Gastrow, R. Alcubilla, P. Ortega, M. Y. Koski, S. Conesa-Boj, A. Fontcuberta i Morral, and H. Savin, Solar Energy Materials and Solar Cells 142, 29 (2015)

Hexagonal Si Realized.
H. I. T Hauge, M. A. Verheijen, S. Conesa-Boj, T. Etzelstorfer, M. Watzinger, D. Kriegner, I. Zardo, C. Fasolato, F. Capitani, P. Postorino, S. Kriegner, A. Li, S. Assali, J. Stangl, and E. P. A. M. Bakkers, Nano Letters 15, 5855 (2015)

Quantum dots in the GaAs/AlxGa1-xAs core-shell nanowires: Statistical occurrence as a function of the shell thickness.
L. Francaviglia, Y. Fontana, S. Conesa-Boj, G. Tutuncuoglu, L. Duchene, M. B. Tanasescu, F. Matteini, and A. Fontcuberta i Morral, Appl. Phys. Lett. 107, 033106 (2015)

Bottom-up engineering of InAs at the nanoscale: from V-shaped nanomembranes to Nanowires.
E. Russo-Averchi, G. Tutuncuoglu, A. Dalmau-Mallorqui, I. Canales Mundet, M. de la Mata, D. Ruffer, J. Arbiol, S. Conesa-Boj and A. Fontcuberta i Morral, J. of Crystal Growth, 420, 47 (2015)

Cracking the Si shell Growth in Hexagonal GaP-Si Core-Shell Nanowires.
S. Conesa-Boj, H. I. T Hauge, M. A. Verheijen, S. Assali, A. Li, E.P.A.M. Bakkers, and A. Fontcuberta i Morral, Nano Letters, 15, 2974 (2015)

High Yield of GaAs Nanowire Arrays on Si Mediated by the Pinning and Contact Angle of Ga.
E. Russo-Averchi, J. Vukajlovic Plestina, G. Tutuncuoglu, A. Dalmau-Mallorqui, M. de la Mata, D. Ruffer, H. Potts, F. Matteini, J. Arbiol, S. Conesa-Boj, and A. Fontcuberta i Morral, Nano Letters 15, 2869 (2015)

Modulation Doping of GaAs/AlGaAs Core-Shell Nanowires with Effective Defect Passivation and High Charge Mobility.
J. L. Boland, S. Conesa-Boj, P. Parkinson, G. Tutuncuoglu, F. Matteini, D. Ruffer, H. J. Joyce, L. M. Herz, A. Fontcuberta i Morral, and M. B. Johnston, Nano Letters 15, 1336 (2015)

Low ensemble disorder in quantum well tube nanowires.
C. L. Davies, P. Parkinson, N. Jiang, J. L. Boland, S. Conesa-Boj, H. H. Tan, C. Jagadish, L. M. Herz, and M. B. Johnston, Nanoscale 7, 20531 (2015)


Three-dimensional atom probe analysis of Al segregation and quantum dot formation in GaAs/AlGaAs core-shell nanowires.
L. Mancini, Y. Fontana, S. Conesa-Boj, I. Blum, F. Vurpillot, L. Francaviglia, E. Russo-Averchi, M. Heiss, J. Arbiol, A. Fontcuberta i Morral, and L. Rigutti, Appl. Phys. Lett. 105, 243106 (2014)

Probing inhomogeneous composition in core/shell nanowires by Raman spectroscopy.
F. Amaduzzi, E. Alarcon-Llado, E. Russo-Averchi, F. Matteini, M. Heiss, G. Tutuncuoglu, S. Conesa-Boj, M. de la Mata, J. Arbiol, and A. Fontcuberta i Morral, J. Appl. Phys. 116, 184303 (2014)

III-V nanowire arrays: growth and light interaction.
M. Heiss, E. Russo-Averchi, A. Dalmau-Mallorqui, G. Tutuncuoglu, F. Matteini, D. Ruffer, S. Conesa-Boj, O. Demichel, E. Alarcon-Llado, and A. Fontcuberta I Morral , Nanotechnology 25, 014015 (2014)

Plastic and Elastic Strain Fields in GaAs-Si core-shell Nanowires.
S. Conesa-Boj, F. Boioli, E. Russo-Averchi, S. Dunand, M. Heiss, D. Ruffer, N. Wyrsch, C. Ballif, L. Miglio, and A. Fontcuberta i Morral, Nano Letters 14, 1859 (2014)

Gold-Free Ternary III-V Antimonide Nanowire Arrays On Silicon: Twin-Free Down To The First Bilayer.
S. Conesa-Boj, D. Kriegner, X. Han, S. Plissard, X. Wallart, J. Stangl, A. Fontcuberta i Morral, and P. Caroff, Nano Letters 14, 326 (2014)


Three-dimensional magneto-photoluminescence as a probe of the electronic properties of crystal-phase quantum disks in GaAs nanowires.
P. Corfdir, B. Van Hattem, E. Uccelli, S. Conesa-Boj, P. Lefebvre, A. Fontcuberta i Morral, and R. T. Phillips, Nano Letters 13, 5303 (2013)

Growth mechanisms and process window for InAs V–shaped nanoscale membranes on Si[001].
E. Russo-Averchi, A. Dalmau-Mallorqui, I. Canales-Mundet, G. Tutuncuoglu, E. Alarcon-Llado, M. Heiss, D. Ruffer, P. Caroff, S. Conesa-Boj, and A. Fontcuberta i Morral, Nanotechnology 24, 435603 (2013)

Raman spectroscopy of self-catalyzed GaAs1-xSbx nanowires grown on silicon.
E. Alarcon-Llado, S. Conesa-Boj, X. Wallart, P. Caroff, and A. Fontcuberta i Morral, Nanotechnology 24, 405707 (2013)

Hybrid axial and radial Si-GaAs heterostructures in nanowires.
S. Conesa-Boj, S. Dunand, E. Russo-Averchi, M. Heiss, D. Ruffer, N. Wyrsch, C. Ballif, and A. Fontcuberta i Morral, Nanoscale 5, 9633 (2013)

Exciton localization mechanisms in wurtzite-zinc-blende GaAs nanowires.
A. M. Graham, P. Corfdir, M. Heiss, S. Conesa-Boj, E. Uccelli, A. Fontcuberta i Morral, and R. T. Phillips, Phys. Rev. B 87, 125304 (2013)

Self-assembled quantum dots in a nanowire system for quantum photonics.
M. Heiss, Y. Fontana, A. Gustafsson, G. Wust, C. Magen, D. O’Regan, J. W. Luo, B. Ketterer, S. Conesa-Boj, A. V. Kuhlmann, J. Houel, E. Russo-Averchi, J. R. Morante, M. Cantoni, N. Marzari, J. Arbiol, A. Zunger, R. J. Warburton and A. Fontcuberta i Morral, Nature Materials 12, 439 (2013)


Vertical III-V V-Shaped Nanomembranes Epitaxially Grown on a Patterned Si[001] Substrate and Their Enhanced Light Scattering.
S. Conesa-Boj, E. Russo-Averchi, A. Dalmau-Mallorqui, J. Trevino, E. F. Pecora, Carlo Forestiere, Alex Handin, M. Ek, L. Zweifel, L. Reine Wallenberg, D. Ruffer, M. Heiss, D. Troadec, L. Dal Negro, P. Caroff, and A. Fontcuberta i Morral, ACS Nano 6, 10982 (2012)

2011 and earlier

Carrier confinement in GaN/AlxGa1-xN nanowire heterostructures.  F. Furtmay, J. Teubert, P. Becker, S. Conesa-Boj, J. R. Morante, A. Chernikov, S. Schafer, S. Chatterjee, J. Arbiol, M. Eickhoff, Physical Review B 84, 205303 (2011)

Direct correlation of atomic structure and optical properties in wurtzite/zinc-blende GaAs nanowire heterostructures.
M. Heiss, S. Conesa-Boj, J. Ren, H.-H. Tseng, A. Gali, E. Uccelli, F. Peiro, J. R. Morante, E. Kaxiras, J. Arbiol, and A. Fontcuberta i Morral, Physical Review B 83, 045303 (2011)

Defect Formation in Ga-Catalyzed Silicon Nanowires.
S. Conesa-Boj, I. Zardo, S. Estrade, L. Wei, P. J. Alet, P. Roca i Cabarrocas, J. R. Morante, F. Peiro, A. Fontcuberta i Morral, and J. Arbiol, Crystal Growth & Design 10, 1534 (2010)

Growth study of indium-catalyzed silicon nanowires by plasma enhanced chemical vapor deposition.
I. Zardo, S. Conesa-Boj, S. Estrade, L. Yu, F. Peiro, P. Roca i Cabarrocas, J. R. Morante, J. Arbiol, and A. Fontcuberta i Morral, Applied Physics A 100, 287 (2010)

Single crystalline and core-shell indium-catalyzed germanium nanowires–a systematic thermal CVD growth study.
Y. Xiang, L. Cao, S. Conesa-Boj, S. Estrade, J. Arbiol, F. Peiro, M. Heiss, I. Zardo, Morante J.R., M. L. Brongersma, and A. Fontcuberta i Morral, Nanotechnology 20, 245608 (2009)

Plasma-enhanced low temperature growth of silicon nanowires and hierarchical structures by using tin and indium catalysts.
L. Yu, B. O.Donnell, P.-J. Alet, S. Conesa-Boj, F. Peiro , J. Arbiol, and P. Roca i Cabarrocas, Nanotechnology 20, 225604 (2009)

Gallium assisted plasma enhanced chemical vapor deposition of silicon nanowires.
I. Zardo, L. Yu, S. Conesa-Boj, S. Estrade, P.-J. Alet, J. Simon, M. Frimmer, P. Roca i Cabarrocas, F. Peiro, J. Arbiol, J. R. Morante, and A. Fontcuberta i Morral, Nanotechnology 20, 155602 (2009)

Catalyst-free nanowires with axial InxGa1-xAs/GaAs heterostructures.
M. Heiss, A. Gustafsson, S. Conesa-Boj, F. Peiro, J. R. Morante, G. Abstreiter, J. Arbiol, L. Samuelson, and A. Fontcuberta i Morral, Nanotechnology 20, 075603 (2009)

Long Range Epitaxial growth of Prismatic Heterostructures on the Facets of Catalyst-Free GaAs Nanowires.
M. Heigoldt, J. Arbiol, D. Spirkoska, J. M. Rebled, S. Conesa-Boj, G. Abstreiter, F. Peiro, J. R. Morante, and A. Fontcuberta i Morral, Journal of Materials Chemistry 19, 840 (2009)

Raman spectroscopy of wurtzite and zinc-blende GaAs nanowires: Polarization dependence, selection rules, and strain effects.
I. Zardo, S. Conesa-Boj, F. Peiro, J. R. Morante, J. Arbiol, E. Uccelli, G. Abstreiter and A. Fontcuberta i Morral, Physical Review B 80, 245324 (2009)

Structural and optical properties of high quality zinc-blende/wurtzite GaAs nanowire heterostructures.
D. Spirkoska, J. Arbiol, A. Gustafsson, S. Conesa-Boj, F. Glas, I. Zardo, M. Heigoldt, M.H. Gass, A. L. Bleloch, S. Estrade, M. Kaniber, J. Rossler, F. Peiro, J. R. Morante, G. Abstreiter, L. Samuelson and A. Fontcuberta i Morral, Physical Review B 80, 245325 (2009)